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TPC8209
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)
TPC8209
Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications
l l l l l Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 30 m (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 30 V) Enhancement-mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm
Maximum Ratings (Ta = 25C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) Rating 30 30 20 5 20 1.5 W PD(2) 1.1 Unit V V V A
JEDEC JEITA TOSHIBA
2-6J1E
Drain power dissipation (t = 10s) (Note 2a)
Single-device operation (Note 3a) Single-device value at dual operation (Note 3b) Single-device operation (Note 3a) Single-device value at dual operation (Note 3b)
Weight: 0.08 g (typ.)
Drain power dissipation (t = 10s) (Note 2b)
PD (1)
0.75 W
Circuit Configuration
8 7 6 5
PD (2) EAS IAR EAR Tch Tstg
0.45
Single pulse avalanche energy (Note 4) Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) Channel temperature Storage temperature range
32.5 5 0.1 150 -55~150
mJ A mJ C C 1 2 3 4
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution.
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TPC8209
Thermal Characteristics
Characteristics Single-device operation (Note 2a) Symbol Rth (ch-a) (1) Rth (ch-a) (2) Rth (ch-a) (1) Rth (ch-a) (2) Max 83.3 Unit
Thermal resistance, channel to ambient (t = 10s) (Note 1a) Single-device value at dual operation (Note 2b)
114 C/W 167
Thermal resistance, channel to ambient (t = 10s) (Note 2b) Single-device value at dual operation (Note 2b)
Single-device operation (Note 2a)
278
Marking (Note 6)
TPC8209
Type Lot No.
Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2:
FR-4 25.4 25.4 0.8 (unit: mm) FR-4 25.4 25.4 0.8 (unit: mm)
(a)
(b)
a)
Device mounted on a glass-epoxy board (a)
b)
Device mounted on a glass-epoxy board (b)
Note 3: a) The power dissipation and thermal resistance values are shown for a single device. (During single-device operation, power is only applied to one device.) b) The power dissipation and thermal resistance values are shown for a single device. (During dual operation, power is evenly applied to both devices.) Note 4: VDD = 24 V, Tch = 25C (initial), L = 1.0 mH, RG = 25 , IAR = 5 A Note 5: Repetitive rating: pulse width limited by maximum channel temperature Note 6: * on lower left of the marking indicates Pin 1. Weekly code: (Three digits) Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year)
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TPC8209
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS V (BR) DSS Vth RDS (ON) RDS (ON) |Yfs| Ciss Crss Coss tr 10 V VGS 0V 4.7 W ID = 2.5 A VOUT RL = 6 W VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 30 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -20 V VDS = 10 V, ID = 1 mA VGS = 4.0 V, ID = 2.5 A VGS = 10 V, ID = 2.5 A VDS = 10 V, ID = 2.5 A Min -- 30 15 1.3 3/4 5 Typ. 3/4 43 30 10 600 95 160 4 Max 10 10 3/4 2.5 60 40 pF Unit A A V V m S
Turn-ON time Switching time Fall time
ton tf toff Qg Qgs Qgd
10
ns
VDD ~ 15 V Duty < 1%, tw = 10 ms =
9
Turn-OFF time Total gate charge (Gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge

35 15 11 4
nC
VDD 24 V, VGS = 10 V, ID = 5 A

Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristics Drain reverse current Pulse (Note 1) Forward voltage (diode) Symbol IDRP VDSF Test Condition -- IDR = 5 A, VGS = 0 V Min -- -- Typ. -- -- Max 20 -1.2 Unit A V
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TPC8209
ID - VDS
10
10 6 8 4 3.5
C om m on source Ta = 25C P ulse test
ID - VDS
20
10 4
8
3.2 3.1
16
8 6
Common source Ta = 25C Pulse test
(A)
(A)
3.5
ID
ID
6
3.0 2.9 2.8
12
3.2
3.1
Drain current
4
Drain current
8
3.0 2.9 2.8
2
2.7 2.6 VGS=2.5V
4
2.7 2.6
0 0 0.2 0.4 0.6 0.8 1
0 0 1 2 3 4
VGS=2.5V
5
Drain-source voltage
VDS
(V)
Drain-source voltage
VDS
(V)
ID - VGS
12
VDS - VGS
0.6
Common source VDS = 10 V Pulse test Common source Ta = 25C Pulse test
(V) VDS Drain-source voltage
0.5
(A)
Drain current
ID
8 100
25
0.4
0.3
4
T=-55
0.2
ID=5A 2.5
0.1
0 0 1 2 3 4 5 6
0 0 2 4 6 8
1.3
10
12
Gate-source voltage
VGS
(V)
Gate-source voltage
VGS
(V)
|Yfs| - ID
100
1000
Common source VDS = 10 V Pulse test
RDS (ON) - ID
Common source Ta = 25C Pulse test
iYfsi
(S)
T=-55 25 10 100
Drain-source ON resistance RDS (ON) (mW)
Forward transfer admittance
100
VGS=4V
10
1
10
0.1 0.1 1 10 100
1 0.1 1 10 100
Drain current
ID
(A)
Drain current
ID
(A)
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TPC8209
RDS (ON) - Ta
(W)
100 100
IDR - VDS
Common source
Drain-source ON resistance RDS (ON)
(A)
Pulse test
80 2.5 60 VGS=4V 40 ID=1.3/2.5/5.0A 10V 20 ID=5.0A 1.3
5 10
Drain reverse current IDR
10
3
VGS=0V,-1V
1
1
0 -80 -40 0 40 80 120 160
0.1 0
-0.4 - 0.8 - 1.2
Common source Ta = 25C Pulse test
-1.6 -2
Ambient temperature Ta (C)
Drain-source voltage
VDS
(V)
Capacitance - VDS
10000
Vth - Ta
5
Common source VDS = 10 V
Gate threshold voltage Vth (V)
4
f = 1 mA Pulse test
(pF)
1000
Ciss
Capacitance C
3
Coss
2
100
Crss
10 0.1
Common source VGS = 10 V ID = 1 mA Pulse test
1
0
1 10 100
-80
-40
0
40
80
120
160
Drain-source voltage
VDS
(V)
Ambient temperature Ta (C)
PD - Ta
2
(1) Device mounted on a glass-epoxy board (a) (Note 2a)
Dynamic input/output characteristics
40
Common source Ta = 25C
40
(W)
(V)
PD
VDS
VDS
Drain power dissipation
Drain-source voltage
1.0 (3)
20 12 6 VGS 10 VDD=24V
20
0.5
(4)
10
0 0
50
100
150
200
0 0 5 10 15 20 25 30
0
Ambient temperature Ta (C)
Total gate charge Qg (nC)
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Gate-source voltage
(2)
t = 10 s
VGS
1.5
(1)
(2) Device mounted on a glass-epoxy board (b) (Note 2b)
30
ID = 8 A Pulse test
30
(V)
TPC8209
rth - tw
1000
Single pulse
(4) (3) (2)
Normalized transient thermal impedance rth (C/W)
100
(1)
10
1
Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) t = 10 s
0.1 0.001
0.01
0.1
1
10
100
1000
Pulse width
tw
(S)
Safe operating area
100
ID max (pluse) *
(A)
10
1 ms*
Drain current
ID
10 ms*
1
0.1
* Single pulse Ta = 25C Curves must be derated linearly with increase in temperature.
0.1 1
VDSS max
10
100
Drain-source voltage
VDS
(V)
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TPC8209
RESTRICTIONS ON PRODUCT USE
000707EAA
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice.
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